Electrodeposition of Crystalline HgTe from a Non-Aqueous Plating Bath. Issue 16 (11th December 2018)

• Record Type: Journal Article
• Authors: Kissling, Gabriela P.; Aziz, Mohsin; Lodge, Andrew W.; Zhang, Wenjian; Alibouri, Mehrdad; Huang, Ruomeng; Hector, Andrew L.; Reid, Gillian; de Groot, Cornelis H.; Beanland, Richard; Bartlett, Philip N.; Smith, David C.
• Is Part Of: Journal of the Electrochemical Society. Volume 165:Issue 16(2018)
• Page Start: D802
• Page End: D807
• Publication Date: 2018-12-11
• Subjects: Electrodeposition -- Electrodeposition - semiconductors -- Semiconductors; Electrochemistry -- Periodicals; 541.3705
• DOI: 10.1149/2.0421816jes
• Languages: English
• ISSNs: 0013-4651

Abstract

Abstract : This paper presents a method for the electrodeposition of stoichiometric, crystalline HgTe, which provides advantages over conventional HgTe preparation techniques, such as physical and chemical vapor deposition, in a number of ways; e.g. fast deposition rates (2 μm/hr) and the ability to reliably produce stoichiometric or near-stoichiometric material. The HgTe is prepared in a dichloromethane based plating bath using [N n Bu4 ]2 [TeCl6 ] and [N n Bu4 ]2 [HgCl4 ] as the precursors for Te and Hg, respectively. The paper details the electrochemical behavior of the plating bath and its components, together with a detailed characterization of the morphology, crystallinity and composition of the prepared HgTe.