Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor (Adv. Electron. Mater. 11/2022). (10th November 2022)

• Record Type: Journal Article
• Authors: Li, Bochang; Wei, Wei; Luo, Li; Gao, Ming; Yu, Zhi Gen; Li, Sifan; Ang, Kah‐Wee; Zhu, Chunxiang
• Is Part Of: Advanced Electronic Materials. Volume 8:Number 11(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-11-10
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202270060
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Nonvolatile Logic‐in‐Memory Computing In article number 2200089, Chunxiang Zhu and co‐workers propose and demonstrate an electrochemical metallization memristor based on a solution‐processed Pt/CuI/Cu structure. Owing to the efficient drift paths provided by Cu vacancies for Cu cations in CuI, very small operating voltages are realized, contributing to the ultralow power consumption. Using CuI memristor arrays, a set of Boolean logic operations and a half adder are implemented.