Inside Front Cover: Mechanism of the Resistivity Switching Induced by the Joule Heating in Crystalline NbO2 (Adv. Quantum Technol. 11/2022). Issue 11 (11th November 2022) - Olin, Samuel W.
Abstract : Nanoscale memristors exhibiting voltage‐induced resistivity switching are a crucial component in the neuromorphic computation architecture. The cover image of article number 2200067 by Wei‐Cheng Lee and co‐workers schematically demonstrates that the weakening of the Nb‐Nb dimers dynamically driven by the Joule heating effect triggers local metal‐to‐insulator transitions responsible for the resistivity switching observed in NbO2 .