Cite
HARVARD Citation
Achilli, S. et al. (2021). Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms. Advanced functional materials. p. n/a. [Online].
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Achilli, S. et al. (2021). Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms. Advanced functional materials. p. n/a. [Online].