P‐2: Nitrogen Behaviors in PEALD‐Grown SiO2 Films Using N2O Plasma Reactant and Its Application in ALD‐IZO TFTs. Issue 1 (28th June 2022)

• Record Type: Journal Article
• Authors: Kim, Dong-Gyu; Yoo, Kwang Su; Kim, Hye-Mi; Park, Jin-Seong
• Is Part Of: Digest of technical papers. Volume 53:Issue 1(2022)
• Page Start: 1043
• Page End: 1046
• Publication Date: 2022-06-28
• Subjects: PEALD -- SiO2 -- N2O plasma -- breakdown field -- display back-plane -- memory device -- power device -- indium-zinc oxide -- oxide-based TFTs; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15677
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We studied nitrogen (N) behaviors in plasma‐enhanced atomic layer deposition (PEALD)‐grown silicon dioxide (SiO2 ) using nitrous oxide (N2 O) plasma reactant. The gradually improved breakdown phenomenon is attributed to N contents. However, although increase in the N contents, excess plasma power is degraded electrical characteristics. For applications of the SiO2 films using N2 O plasma reactant, we fabricated indium‐zinc oxide top‐gate thin film transistors with SiO2 gate insulator (G.I). The stable both transfer characteristics and instability results are originated from decrease in oxygen vacancy in active layer by N2 O plasma treatment during the G.I deposition.