Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD. Issue 10 (15th June 2022)

• Record Type: Journal Article
• Authors: Kakanakova-Georgieva, Anelia; Papamichail, Alexis; Stanishev, Vallery; Darakchieva, Vanya
• Is Part Of: Physica status solidi. Volume 259:Issue 10(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-06-15
• Subjects: gallium nitride -- hydrogen -- metal–organic chemical vapor deposition -- p-type doping; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.202200137
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Herein, metal–organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] ≈2 × 10 19 cm −3 is performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, are maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as‐grown Mg‐doped GaN layers is certified by a room‐temperature hole concentration of p ≈2 × 10 17 cm −3 in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can coexist with a dominant and evidently electrically active isolated MgGa acceptor. Abstract : This work provides experimental aspects of the deliberate engagement of hydrogen in the control of magnesium incorporation into gallium nitride by metal–organic chemical vapor deposition serving pragmatic purposes.