Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation. Issue 10 (18th October 2022)

• Record Type: Journal Article
• Authors: Uedono, Akira; Sakurai, Hideki; Uzuhashi, Jun; Narita, Tetsuo; Sierakowski, Kacper; Ishibashi, Shoji; Chichibu, Shigefusa F.; Bockowski, Michal; Suda, Jun; Ohkubo, Tadakatsu; Ikarashi, Nobuyuki; Hono, Kazuhiro; Kachi, Tetsu
• Is Part Of: Physica status solidi. Volume 259:Issue 10(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-10-18
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.202270028
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : The cover image shows a schematic illustration of atom probe tomography (APT) of Mg‐implanted GaN. Three arrows indicate the trajectories of field evaporated Ga, Mg, and N atoms from the surface of the tip‐shaped specimen (bottom left) to a position‐sensitive detector (top right). The 3D atom map of Mg implanted by sequential N‐implantation after ultra‐high‐pressure annealing is shown top left, and a corresponding scanning transmission electron microscope (STEM) image is displayed bottom right. Complementary APT/STEM analysis reveals the Mg segregation at defects in the GaN specimen. For further details, see article number 2200183 by Akira Uedono and co‐workers.