Cite
HARVARD Citation
Yu, H. et al. (2022). 1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits. IET power electronics. 15 (14), pp. 1502-1510. [Online].
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Yu, H. et al. (2022). 1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits. IET power electronics. 15 (14), pp. 1502-1510. [Online].