Delta‐Doped β‐(Al0.17Ga0.83)2O3/Ga2O3 Double‐Channel Heterostructure MODFETs. Issue 20 (14th April 2022)

• Record Type: Journal Article
• Authors: Atmaca, Gökhan; Cha, Ho-Young
• Other Names: Lee Jae Shin guestEditor.; Yoon Sung‐Min guestEditor.
• Is Part Of: Physica status solidi. Volume 219:Issue 20(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-04-14
• Subjects: 2D electron gas (2DEG) -- delta-doped β-Ga2O3 heterostructures -- modulation-doped field-effect transistors (MODFETs) -- β-Ga2O3; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100842
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, in delta‐doped β‐(Alx Ga1–x )2 O3 /β‐Ga2 O3 heterostructures, the 2D electron gas (2DEG) density is mainly limited by the low conduction‐band offset at the heterointerface. Double‐channel heterostructures may be a candidate solution for enhancing the 2DEG density in these heterostructures. In this study, the output characteristics, transfer, transconductance, and off‐state current characteristics of delta‐doped β‐(Al0.17 Ga0.83 )2 O3 /β‐Ga2 O3 double‐channel heterostructure modulation‐doped field‐effect transistors (MODFETs), including the effects of an ultrathin spacer layer and a back‐barrier layer, are numerically evaluated. The electrical characteristics of the proposed double‐channel heterostructure MODFET are compared with those of a single‐channel heterostructure MODFET. The proposed double‐channel heterostructure MODFET shows a maximum drain current of 133.7 mA mm −1 and a g m peak of 40 mS mm −1, which are higher than those in the single‐channel case. The calculated threshold voltage is −3.45 V. The dependence of the Si δ‐doping density in the second barrier and channel layer thickness on the electrical characteristics of the proposed device is evaluated and discussed. A β‐(Al0.17 Ga0.83 )2 O3 /β‐Ga2 O3 superlattice back‐barrier structure is also implemented in delta‐doped β‐Ga2 O3 ‐based heterostructure MODFETs to improve their off‐state characteristics for the first time. Abstract : Herein, the output, transfer, transconductance, and breakdown characteristics of delta‐doped β‐(Al0.17 Ga0.83 )2 O3 /β‐Ga2 O3 double‐channel heterostructure modulation‐doped field‐effect transistors (MODFETs) with an ultrathin spacer layer and back‐barrier structure are investigated using a Silvaco ATLAS TCAD simulation environment and compared with those of the single‐channel heterostructure MODFET in a single study.