Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2. Issue 11 (20th September 2022)

• Record Type: Journal Article
• Authors: Li, Jiawei; Wang, Shuopei; Li, Lu; Wei, Zheng; Wang, Qinqin; Sun, Huacong; Tian, Jinpeng; Guo, Yutuo; Liu, Jieying; Yu, Hua; Li, Na; Long, Gen; Bai, Xuedong; Yang, Wei; Yang, Rong; Shi, Dongxia; Zhang, Guangyu
• Is Part Of: Small science. Volume 2:Issue 11(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-09-20
• Subjects: chemical vapor deposition -- field-effect transistors -- monolayer MoSe2 -- transition metal dichalcogenides -- wafer-scale monolayers; Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.5
• DOI: 10.1002/smsc.202200062
• Languages: English
• ISSNs: 2688-4046

Abstract

Abstract : 2D semiconducting transition metal dichalcogenides (TMDs) are considered promising building blocks for emergent electronic and optoelectronic devices. As one of the representatives of 2D semiconductors, monolayer MoSe2 has excellent electrical and optical properties and has attracted a lot of research interest recently. To realize various device applications, large‐scale synthesis of monolayer MoSe2 with high crystal quality is critical, yet remains challenging. Herein, the growth of monolayer MoSe2 at a 4 inch wafer‐scale by chemical vapor deposition is demonstrated. Based on a multisource design and vertical placement of substrates, wafer‐scale continuity and uniformity of layer thickness, e.g., the monolayer, are achieved. This growth technique is also applicable to the wafer‐scale growth of other 2D semiconductors such as WS2 and MoS2 . Abstract : A 4 inch wafer‐scale monolayer MoSe2 is successfully synthesized by chemical vapor deposition. Based on a multisource design and vertical placement of substrates, the monolayer films achieve wafer‐scale continuity and uniformity, which suggest a great potential for electronic devices. This growth technique is also applicable to the wafer‐scale growth of other 2D semiconductors families such as WS2 and MoS2 .