Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films (Adv. Funct. Mater. 28/2022). (11th July 2022)

• Record Type: Journal Article
• Authors: Mazza, Alessandro R.; Lapano, Jason; MeyerIII, Harry M.; Nelson, Christopher T.; Smith, Tyler; Pai, Yun‐Yi; Noordhoek, Kyle; Lawrie, Benjamin J.; Charlton, Timothy R.; Moore, Robert G.; Ward, T. Zac; Du, Mao‐Hua; Eres, Gyula; Brahlek, Matthew
• Is Part Of: Advanced functional materials. Volume 32:Number 28(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-07-11
• Subjects: intrinsic magnetic topological insulators -- MnBi 2Te 4 -- molecular beam epitaxy -- quantum anomalous Hall -- quantum materials -- topological materials; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202270162
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Magnetic Topological Insulators Targeted modification of properties is crucial to engineer novel phenomena such as the quantum anomalous Hall effect. In article number 2202234, Gyula Eres, Matthew Brahlek, and co‐workers show that the anomalous Hall effect in the magnetic topological insulator MnBi2 Te4 is highly tunable, to the point of complete sign reversal, by modification of the top‐most layer via oxidation, which is linked to a subtle rebalancing of the global magnetic state.