Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen. (15th January 2023)

• Record Type: Journal Article
• Authors: Hadid, Jawad; Colambo, Ivy; Avila, Jose; Plaud, Alexandre; Boyaval, Christophe; Deresmes, Dominique; Nuns, Nicolas; Dudin, Pavel; Loiseau, Annick; Barjon, Julien; Wallart, Xavier; Vignaud, Dominique
• Is Part Of: Nanotechnology. Volume 34:Number 3(2023)
• Publication Date: 2023-01-15
• Subjects: boron nitride -- epitaxy -- 2D material -- stacking -- borazine; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ac99e5
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: 2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on Ni when using borazine alone. The nucleation density and the shape of the 2D-BN domains are clearly related to the Ni substrate preparation and to the growth parameters. Based on spatially-resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the N1s and B1s components and their relationship with an electronic coupling at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained, although the material thickness is not evenly distributed. The 2D-BN presents a granular structure on (111) oriented Ni grains, showing a rather poor cristallographic quality. On the contrary, high quality 2D-BN is found on (101) and (001) Ni grains, where triangular islands are observed whose lateral size is limited to ∼20 μ m.