Substitutional diffusion of Mg into GaN from GaN/Mg mixture. (1st November 2022)

• Record Type: Journal Article
• Authors: Itoh, Yuta; Lu, Shun; Watanabe, Hirotaka; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Tanaka, Atsushi; Amano, Hiroshi
• Is Part Of: Applied physics express. Volume 15:Number 11(2022)
• Publication Date: 2022-11-01
• Subjects: GaN -- Mg implantation -- Mg diffusion -- substitutional diffusion -- p-type formation -- Mg doping; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac9c83
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We evaluated Mg-diffusion into GaN from GaN/Mg mixture. The diffusion depth of Mg increased with diffusion temperature from 1100 °C to 1300 °C, whereas the Mg concentration remained constant at 2–3 × 10 18 cm −3 independent of temperature. The estimated activation energy for Mg diffusion was 2.8 eV, from which the substitutional diffusion mechanism was predicted. Mg-diffused GaN samples showed p-type conductivity with a maximum hole mobility of 27.7 cm 2 V −1 s −1, suggesting that substitutional diffusion contributes to Mg activation. This diffusion technique can be used to easily form p-type GaN and has potential as a p-type selective doping technique.