Cite
HARVARD Citation
Mii, T. et al. (2023). Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation. Materials science in semiconductor processing. p. . [Online].
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Mii, T. et al. (2023). Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation. Materials science in semiconductor processing. p. . [Online].