Noncollinear Mn3Sn for antiferromagnetic spintronics. (November 2022)

• Record Type: Journal Article
• Authors: Wang, Xiaoning; Yan, Han; Zhou, Xiaorong; Chen, Hongyu; Feng, Zexin; Qin, Peixin; Meng, Ziang; Liu, Li; Liu, Zhiqi
• Is Part Of: Materials today physics. Volume 28(2022)
• Publication Date: 2022-11
• Subjects: Mn3Sn -- Noncollinear antiferromagnet -- Antiferromagnetic spintronics -- Topological Weyl semimetal -- Electrical manipulation; Materials science -- Periodicals; Physics -- Periodicals; Electronic journals; 530.41
• DOI: 10.1016/j.mtphys.2022.100878
• Languages: English
• ISSNs: 2542-5293

Abstract

Abstract: In recent years, antiferromagnetic spintronics has attracted enormous attentions due to the great potential for next-generation picosecond and highly packed information technology. Since the theoretical prediction and experimental observation of the large anomalous Hall effect in the noncollinear antiferromagnetic metal Mn3 Sn, which break the traditional perception that the anomalous Hall effect is proportional to magnetization, this material itself has become a hot spot in the antiferromagnetic spintronics. More intriguingly, evidence for the existence of Weyl points in Mn3 Sn has been reported, making it an ideal candidate even for topological antiferromagnetic spintronics. In this review, we comprehensively summarize various exotic spintronic properties of Mn3 Sn, such as the anomalous Hall effect, the anomalous Nernst effect, the topological Hall effect, the magneto-optical Kerr effect, the spin Hall effect and its Terahertz spintronic response. In order to build practical spintronic devices, we then discuss the manipulation of its spin structures for random access memory device applications. In the final part, brief perspectives on future research regarding Mn3 Sn are presented, which are expected to pave the way for practical device applications related to the antiferromagnetic spintronics field. Graphical abstract: Image 1 Highlights: Summarize various exotic spintronic properties and enormous potential in technology applications of Mn3 Sn. Discuss the manipulation of the spin structures in Mn3 Sn for random access memory device applications. Prospect several antiferromagnetic spintronics devices based on Mn3 Sn.