Cite
HARVARD Citation
Sharma, D. et al. (2022). 10T FinFET based SRAM cell with improved stability for low power applications. International journal of electronics. 109 (12), pp. 2053-2068. [Online].
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Sharma, D. et al. (2022). 10T FinFET based SRAM cell with improved stability for low power applications. International journal of electronics. 109 (12), pp. 2053-2068. [Online].