Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage. Issue 41 (4th October 2022)

• Record Type: Journal Article
• Authors: Lv, Songyang; Wang, Shouzhi; Wang, Tailin; Liu, Lei; Yu, Jiaoxian; Dong, Tianran; Wang, Guodong; Wang, Zhongxin; Liang, Chang; Li, Lili; Xu, Xiangang; Zhang, Lei
• Is Part Of: Journal of materials chemistry. Volume 10:Issue 41(2022)
• Page Start: 22007
• Page End: 22015
• Publication Date: 2022-10-04
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d2ta04540k
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : Vacancy-modified few-layered GaN crystal as an advanced electrode for IL-based SC devices, which is applied to high-temperature energy storage field for the first time. And the device exhibits superior energy storage capability at 150 °C. Abstract : Exploring energy storage materials with ultralong cycle lifespan and high energy/power density in extremely high-temperature environments is crucial. In this work, a gallium nitride (GaN) crystal is applied in a high-temperature energy storage field for the first time, and the relevant reasons for the improved energy storage are proposed. A few-layered GaN crystal rich in N-vacancies is designed and fabricated via an efficient and facile strategy, which further increases its specific area and active sites. An ionic-liquid-based supercapacitor device is developed by combining the GaN and ionic liquids. This device exhibits high specific capacity (52.58 mF cm −2 at 0.8 mA cm −2 ) and a wide voltage window (0–2.7 V). Even at a high temperature of 150 °C and a scan rate of up to 50 V s −1, 86.2% capacity is retained at 8 mA cm −2 over 10 000 cycles. Additionally, the energy storage mechanism of GaN with N vacancies is further investigated using density functional theory calculations. This study systematically demonstrates the application potential of GaN crystals in the field of high-temperature energy storage, and provides a strategy for the application of wide-bandgap semiconductors in a new field.