Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality. (1st October 2022)

• Record Type: Journal Article
• Authors: Nasir, Abbas; Xu, Bin; Ali, Irshad; akbar, Jehan
• Is Part Of: Materials research express. Volume 9:Number 10(2022)
• Publication Date: 2022-10-01
• Subjects: atomic force microscopy -- MOCVD -- polarization indirect microscopic imaging -- Al composition graded AlGaN buffer layer; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ac9a24
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Metal-organic chemical vapor deposition was successfully used to grow un-doped nonpolar a- plane AlGaN on an r- plane sapphire substrate. High-resolution x-ray (HR-XRD), atomic force microscopy, Polarization Indirect Microscopic Imaging, and Hall effect measurement were used to investigate the effect of the nonpolar a- plane AlGaN layer on the graded AlGaN buffer layer. The results reveal that inserting the AlGaN-graded layer improves the crystalline quality and morphology of the surface. The root means the square value was less than 1.47 nm, while the background electron concentration was − 3.9 × 10 17 cm − 3 . In addition, the HR-XRD full width at half maximum indicates improved crystalline quality.