Fabrication of ZnO dual electron transport layer via atomic layer deposition for highly stable and efficient CsPbBr3 perovskite nanocrystals light-emitting diodes. (8th January 2023)

• Record Type: Journal Article
• Authors: Zhou, Binze; Qin, Le; Wang, Pengfei; Chen, Zhuo; Zang, Jianfeng; Zhang, Jianbing; Wen, Yanwei; Chen, Rong
• Is Part Of: Nanotechnology. Volume 34:Number 2(2023)
• Publication Date: 2023-01-08
• Subjects: atomic layer deposition -- perovskite nanocrystal -- light emitting diode -- dual electron transport layer; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ac98ce
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Electron transport layers (ETLs) are important components of high-performance all-inorganic perovskite nanocrystals light-emitting diodes (PNCs-LED). Herein, atomic layer deposition (ALD) of inorganic ZnO layer is combined to the organic 1, 3, 5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) to form dual ETLs to enhance both the efficiency and stability of PNCs-LED simultaneously. Optimization of ZnO thickness suggested that 10 cycles ALD yields the best performance of the devices. The external quantum efficiency of the device reaches to 7.21% with a low turn-on voltage (2.4 V). Impressively, the dual ETL PNCs-LED realizes maximum T 50 lifetime of 761 h at the initial luminance of 100 nit, which is one of the top lifetimes among PNCs-LEDs up to now. The improved performance of dual ETL PNCs-LED is mainly due to the improved charge transport balance with favorable energy level matching. These findings present a promising strategy to modify the function layer via ALD to achieve both highly efficient and stable PNCs-LED.