Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2. (12th May 2021)
- Record Type:
- Journal Article
- Title:
- Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2. (12th May 2021)
- Main Title:
- Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2
- Authors:
- Hong, Sungjae
Kim, Kang Lib
Cho, Yongjae
Cho, Hyunmin
Park, Ji Hoon
Park, Cheolmin
Im, Seongil - Abstract:
- Is Part Of:
- Advanced Electronic Materials. Volume 7:Number 5(2021)
- Journal:
- Advanced Electronic Materials
- Issue:
- Volume 7:Number 5(2021)
- Issue Display:
- Volume 7, Issue 5 (2021)
- Year:
- 2021
- Volume:
- 7
- Issue:
- 5
- Issue Sort Value:
- 2021-0007-0005-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-05-12
- Subjects:
- Materials -- Electric properties -- Periodicals
Materials science -- Periodicals
Magnetic materials -- Periodicals
Electronic apparatus and appliances -- Periodicals
537 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2199-160X ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/aelm.202000906 ↗
- Languages:
- English
- ISSNs:
- 2199-160X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.848400
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 24183.xml