Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe2 Van der Waals Heterojunctions. (30th March 2021)

• Record Type: Journal Article
• Authors: Zhao, Dongyang; Chen, Yan; Jiang, Wei; Wang, Xudong; Liu, Jingjing; Huang, Xinning; Han, Sancan; Lin, Tie; Shen, Hong; Wang, Xianying; Hu, Weida; Meng, Xiangjian; Chu, Junhao; Wang, Jianlu
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 5(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-03-30
• Subjects: broad spectrum detection -- gate‐tunable photodiodes -- mixed‐dimensional van der Waals heterostructures; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202001066
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: The dangling‐bond‐free surfaces of 2D materials enable them to possess various degrees of freedom to form heterostructures with non‐2D materials. This allows for the combination of the advantages of different dimensional materials to fabricate van der Waals (vdW) heterostructures, thereby improving device performance and even bringing diversity and novelty. Herein, a mixed‐dimensional vdW heterostructure photodiode comprising a 1D tellurium (Te) nanowire and a 2D molybdenum ditelluride (MoTe2 ) flake is demonstrated. Forward rectifying and backward rectifying characteristics are realized by applying different gate voltage. The device displays a broad spectral response from visible to near‐infrared and exhibits ultrahigh external quantum efficiency of 7.16 × 10 3 % for photogating effect. Moreover, the response time can be improved by controlling gate voltage and a rapid response time of 4.8 ms is achieved. These mixed‐dimensional vdW heterojunctions, which take advantages of both 1D and 2D semiconductors, will facilitate the development of next‐generation electronics and optoelectronics. Abstract : Van der der Waals heterostructure photodiodes based on stacked 1D Te nanowires and 2D MoTe2 flakes are proposed. Rectification inversion is realized under different gate voltage because Te shows p‐type while MoTe2 shows ambipolar properties. The operation mechanism is described with band structure diagram and optoelectronic performance under 520, 940, and 1310 nm lasers is studied.