Cite
HARVARD Citation
Gay, R. et al. (2022). AC stress analysis of trench-based multi-gate transistors in a 40 nm e-NVM technology. Microelectronics and reliability. p. . [Online].
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Gay, R. et al. (2022). AC stress analysis of trench-based multi-gate transistors in a 40 nm e-NVM technology. Microelectronics and reliability. p. . [Online].