Cite
HARVARD Citation
Masin, F. et al. (2022). Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs. Microelectronics and reliability. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Masin, F. et al. (2022). Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs. Microelectronics and reliability. p. . [Online].