Complex Oxides: Quasi‐Single‐Crystalline ZnGa2O4 Films via Solid Phase Epitaxy for Enhancing Deep‐Ultraviolet Photoresponse (Adv. Mater. Interfaces 18/2019). Issue 18 (23rd September 2019)

• Record Type: Journal Article
• Authors: Chen, Po‐Wei; Huang, Shiau‐Yuan; Yuan, Shuo‐Huang; Chen, Yi‐An; Hsiao, Po‐Wen; Wuu, Dong‐Sing
• Is Part Of: Advanced materials interfaces. Volume 6:Issue 18(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-23
• Subjects: complex oxides -- deep‐ultraviolet photodetectors -- rapid thermal annealing -- solid‐phase epitaxy -- ZnGa2O4; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201970116
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : The quasi‐single‐crystalline ZnGa2 O4 deep‐ultraviolet (DUV) photodetector is achieved via the solid‐phase epitaxy method using the sputtering and rapid‐thermal annealing processes. Compared with the nanocrystalline ZnGa2 O4 photodetector, the responsivity of quasi‐single‐crystalline ZnGa2 O4 photodetector shows a relative enhancement of 256% at λ = 240 nm. More details can be found in article number 1901075 by Po‐Wei Chen, Dong‐Sing Wuu, and co‐workers.