Ultra‐Confined Catalytic Growth Integration of Sub‐10 nm 3D Stacked Silicon Nanowires Via a Self‐Delimited Droplet Formation Strategy (Small 42/2022). Issue 42 (20th October 2022) - Hu, Ruijin
Abstract : Droplet Control In article number 2204390, Linwei Yu and co‐workers successfully demonstrate stacked growth integration of ultrathin silicon nanowires, with width and height of W nw = 9.9 ± 1.2 nm (down to 8 nm) and H nw = 18.8 ± 1.8 nm approaching to the critical‐dimension of 10 nm technology node, thanks to a self‐delimited droplet control strategy, with tunable channel cross‐sections, which are ideal candidates for monolithic 3D integration of logic‐in‐memory and neuromorphic applications.