Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition. (1st October 2022)

• Record Type: Journal Article
• Authors: O'Donnell, S; Snelgrove, M; Shiel, K; Weiland, C; Hughes, G; Woicik, J; O'Neill, D; Jose, F; McFeely, C; O'Connor, R
• Is Part Of: Materials research express. Volume 9:Number 10(2022)
• Publication Date: 2022-10-01
• Subjects: thin films -- cobalt nitride -- atomic layer deposition -- HAXPES -- XPS; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ac9959
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies. The growth process is characterised using an in situ cycle-by-cycle methodology to identify the main factors which underpin optimal material growth. The role of co-reactant dosing and substrate temperature is analysed in detail to demonstrate the impact these parameters have on the overall composition of the film. The in situ approach, combined with high-energy synchrotron-based photoemission studies of the resulting films, enables understanding of the bulk chemical properties without need for physical removal of material by sputtering. The results provide an insight into optimising plasma assisted ALD processes for deposition of cobalt nitride, and strategies for minimizing carbon incorporation into the film from the precursor ligands.