Facet-engineering enhanced room-temperature ferroelectric control of magnetism in semiconducting β-FeSi2″. (15th November 2022)

• Record Type: Journal Article
• Authors: Wu, Shuyi; Wang, Anqi; Shan, Yun; Liu, Lizhe
• Is Part Of: Solid state communications. Volume 356(2022)
• Publication Date: 2022-11-15
• Subjects: Electric field modulation -- β-FeSi2 -- Room-temperature ferromagnetism -- Polymer ferroelectric -- Facet engineering; Solid state chemistry -- Periodicals; Solid state physics -- Periodicals; Chimie de l'état solide -- Périodiques; Physique de l'état solide -- Périodiques; 530.41
• DOI: 10.1016/j.ssc.2022.114954
• Languages: English
• ISSNs: 0038-1098

Abstract

Abstract: The electric-field control of the magnetism of magnetic semiconductors is highly desirable for spintronic-integrated circuits with ultralow power consumption. However, the low Curie temperature, small magnetic moments and the limited screening thickness hinder the practical application of the devices. Herein, we propose a novel strategy to enhance electrical control of magnetic semiconductors at room temperature by facet engineering. Taking β-FeSi2 as a prototype material, which has strong facet-induced room-temperature ferromagnetism, significant nonvolatile room-temperature control of magnetism is realized at the interface between ferromagnetic β-FeSi2 and ferroelectric P(VDF-TrFE). Because β-FeSi2 is ferromagnetic at the surface and non-magnetic in the bulk, the surface ferromagnetism can be successfully modulated through the remarkable carrier density variation at the interface caused by large remanent ferroelectric polarization. The facet-engineering enhanced room-temperature ferroelectric control of magnetism paves the way towards future nonvolatile and low-power-consumption spintronic devices. Highlights for: A facet-engineering strategy is proposed to enhance the electric-field control of the magnetism in semiconducting β-FeSi2 . The significant nonvolatile room-temperature control of magnetism is realized at the interface between β-FeSi2 and ferroelectric P(VDF-TrFE). The strategy can be generalized to other semiconductor materials.