Cite
HARVARD Citation
Ma, Q. et al. (2021). Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate. Electronics letters. 57 (15), pp. 591-593. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Ma, Q. et al. (2021). Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate. Electronics letters. 57 (15), pp. 591-593. [Online].