Relationship between resistive switching and Mott transition in atomic layer deposition prepared La2Ti2O7-x thin film. (1st January 2023) - Wang, Yue
Abstract: This study prepared Mott-metal state thin film La2 Ti2 O7-x on TiN substrate using atomic layer deposition, and confirmed W/La2 Ti2 O7-x /TiN clockwise forming-less resistive switching. The resistive switching mechanism was voltage-driven and oxygen vacancy doping-controlled Mott transition. Positive voltage induces the formation of oxygen vacancy in La2 Ti2 O7-x and change it from Mott-metal to Mott-insulator state, with the process reversible under negative voltage. We show that N doping can reduce the Ti 3+ ratio in La2 Ti2 O7-x film, producing a weakly correlated system compared with La2 Ti2 O7-x film without N-doping. Nitrogen doping also increased resistive switching operation voltage and reduced La2 Ti2 O7-x film on/off ratio. Thus, La2 Ti2 O7-x, was a promising candidate for the fabrication of resistive switching device based on Mott transition. Graphical abstract: Image, graphical abstract