Cite
HARVARD Citation
Xie, F. et al. (2022). Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt. Advanced Electronic Materials. p. n/a. [Online].
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Xie, F. et al. (2022). Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt. Advanced Electronic Materials. p. n/a. [Online].