Review on the Microstructure of Ferroelectric Hafnium Oxides. Issue 10 (7th August 2022)

• Record Type: Journal Article
• Authors: Lederer, Maximilian; Lehninger, David; Ali, Tarek; Kämpfe, Thomas
• Other Names: Barabash Sergey V. guestEditor.; Park Min Hyuk guestEditor.; Schenk Tony guestEditor.
• Is Part Of: Physica status solidi. Volume 16:Issue 10(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-08-07
• Subjects: ferroelectrics -- hanfium oxide -- microstructures; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202200168
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Ferroelectric hafnium oxide is of major interest for a multitude of applications in microelectronics, ranging from neuromorphic devices to actuators and sensors. While the electrical performance is commonly discussed in depth, the influence of the microstructure is often disregarded. However, in recent years, more research groups shed light into the microstructural background of ferroelectric behavior in hafnium oxide films. To give a more general and complete picture of the different influences on the microstructure and its relevance for the applications, the process and stack influences on the microstructure are reviewed and summarized. While a few mechanisms are not yet understood in depth, a coherent picture on the formation of the microstructure in ferroelectric hafnium oxide layers can be gained. Abstract : Ferroelectric hafnium oxide is of great interest for various applications in microelectronics like nonvolatile memories, neuromorphic computing, actuators, and sensors. In this review article, the influence of the microstructure on the ferroelectric and electric performance is discussed for the aforementioned applications and related device concepts, giving a coherent picture of the state‐of‐the‐art knowledge.