Hydrogen Atom Doping—A Versatile Method for Modulated Interface Resistive Switching. (25th June 2022)

• Record Type: Journal Article
• Authors: Vanka, Srinivas; Shin, Hyungki; Davidson, Bruce A.; Liu, Chong; Zou, Ke
• Is Part Of: Advanced Electronic Materials. Volume 8:Number 10(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-06-25
• Subjects: catalyst metals -- interface states -- proton doping -- resistive switching -- transition metal oxide; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202200353
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Interface kinetics plays a crucial role in modulating the resistive switching mechanism for memristor devices with a Schottky junction. This study introduces H atoms by catalytic doping and examines the interfacial electrical transfer characteristics of the Pd/Nb‐doped SrTiO3 (Nb‐STO). The I–V measurements show that H + doping at the Pd/Nb‐STO interface reduces the barrier height by 300 mV compared to the sample before H + doping. This reduction in barrier height is further correlated with the decrease in built‐in potential by 300 mV and depletion layer thickness from C–V measurements. The underlying reason for such a drastic change in resistive switching characteristics is the reduction of interface layer thickness. The work highlights the easy use of Pd metal to introduce H atoms to oxide materials and provides insight into their effects on switching mechanisms. Abstract : Proton doping in Pd/Nb‐STO resistive switching devices has drastically improved the interface kinetics by reducing the defective interface layer thickness. The reduced interface layer has led to low electron tunneling resistance, reduction in depletion layer thickness, barrier height, and built‐in potential for H + doped devices.