Cite
HARVARD Citation
Bai, H. et al. (2022). Interlayer‐Incorporation of MoS2 (TM‐MoS2) to Achieve Unique Magnetic and Electronic Properties for Spintronics. Advanced Electronic Materials. p. n/a. [Online].
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Bai, H. et al. (2022). Interlayer‐Incorporation of MoS2 (TM‐MoS2) to Achieve Unique Magnetic and Electronic Properties for Spintronics. Advanced Electronic Materials. p. n/a. [Online].