Wafer‐fused 1300 nm VCSELs with an active region based on superlattice. Issue 18 (3rd June 2021)

• Record Type: Journal Article
• Authors: Blokhin, Sergey; Babichev, Andrey; Gladyshev, Andrey; Karachinsky, Leonid; Novikov, Innokenty; Blokhin, Alexey; Rochas, Stanislav; Denisov, Dmitrii; Voropaev, Kirill; Ionov, Alexander; Ledentsov, Nikolay; Egorov, Anton
• Is Part Of: Electronics letters. Volume 57:Issue 18(2021)
• Page Start: 697
• Page End: 698
• Publication Date: 2021-06-03
• Subjects: Electronics -- Periodicals; 621.381
• DOI: 10.1049/ell2.12232
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract: The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.