Neutron-Induced Radiation Effects in UMOS Transistor. Issue 1 (1st September 2022)

• Record Type: Journal Article
• Authors: Alberton, S G; Bôas, A C V; Medina, N H; Guazzelli, M A; Aguiar, V A P; Added, N; Federico, C A; Gonçalez, O L; Cavalcante, T C; Pereira Junior, E C F; Vaz, R G
• Is Part Of: Journal of physics. Volume 2340:Issue 1(2022)
• Publication Date: 2022-09-01
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/2340/1/012046
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Ground level electronics and avionics systems may suffer from radiation effects induced by neutrons. Neutrons can induce radiation effects in electronic devices via fusion-evaporation nuclear reactions, but few studies have been reported for technologies such as UMOSFET. In this work, estimates and experimental studies on neutron-induced radiation effects via nuclear reactions in a Si-based UMOSFET are presented. Methods for probability estimates of neutron-induced Single-Event Effects (SEEs) in Si-based power transistors and neutron beam energy measurement is presented. The energy spectrum of a UMOSFET subject to fast neutron irradiation was then compared to that of a high charge collection efficiency silicon particle detector.