Ferroelectric-gated MoSe2 photodetectors with high photoresponsivity. (21st November 2022)

• Record Type: Journal Article
• Authors: Yan, Qijie; Cheng, Jiaxin; Wang, Weike; Sun, Mengjiao; Yin, Yanling; Peng, Yuehua; Zhou, Weichang; Tang, Dongsheng
• Is Part Of: Journal of physics. Volume 34:Number 47(2022)
• Publication Date: 2022-11-21
• Subjects: MoSe2 -- PMN-PT -- ferroelectric -- photodetector; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/1361-648X/ac94af
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe2 thin flakes on ferroelectric 0.7PbMg1/3 Nb2/3 O3 –0.3PbTiO3 (PMN-PT). Under the excitation of 638 nm laser, the photoresponsivity can be greatly boosted to 59.8 A W −1 and the detectivity to 3.2 × 10 10 Jones, with the improvement rates of about 1500% and 450%, respectively. These results suggest hybrid structure photodetector of two-dimensional layered material and ferroelectric has great application prospects in photoelectric detector.