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HARVARD Citation
Kim, D. et al. (2022). Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures. Solid-state electronics. p. . [Online].
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Kim, D. et al. (2022). Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures. Solid-state electronics. p. . [Online].