Tunneling transport of 2D anisotropic XC (X = P, As, Sb, Bi) with a direct band gap and high mobility: a DFT coupled with NEGF study. Issue 37 (7th September 2022)

• Record Type: Journal Article
• Authors: Hu, Xuemin; Liu, Wenqiang; Yang, Jialin; Wang, Wei; Sun, Luanhong; Shi, Xiaoqin; Hao, Yufeng; Zhang, Shengli; Zhou, Wenhan
• Is Part Of: Nanoscale. Volume 14:Issue 37(2022)
• Page Start: 13608
• Page End: 13613
• Publication Date: 2022-09-07
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d2nr03578b
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : α-XC (X = P, As, Sb, Bi) monolayers hold a direct band gap of 0.73 to 1.40 eV and exhibit a high electron mobility of up to 8 × 10 3 cm 2 V −1 s −1 . 2D α-XC TFETs present good device performance and excellent device switching characteristics. Abstract : Direct bandgap and significant anisotropic properties are crucial and beneficial for nanoelectronic applications. In this work, through first-principles calculations, we investigate novel two-dimensional (2D) α-XC (X = P, As, Sb, Bi) materials, which possess a direct bandgap of 0.73 to 1.40 eV with remarkable anisotropic electronic properties. Intriguingly, 2D α-XC presents the highest electron mobility near 8 × 10 3 cm 2 V −1 s −1 along the Γ–X direction. Moreover, the transfer characteristics of the 2D α-XC TFETs are thoroughly assessed through NEGF methods. AsC TFETs demonstrate an on-state current larger than 2.2 × 10 3 μA μm −1, which can satisfy the International Technology Roadmap for Semiconductors (ITRS) for high-performance requirements. In particular, the minimum value of subthreshold swing of devices is as low as 15 mV dec −1, indicating excellent device switching characteristics. The relevant calculation results show that 2D α-XC monolayers could be a promising candidate in next-generation high-performance device applications.