Temperature Dependent Analysis of Mixed CNT Bundle Interconnecting using Active Shielding Technique. (1st September 2022)

• Record Type: Journal Article
• Authors: Kumar, Ch. Praveen; Rao, E. Sreenivasa; Sekhar, P. Chandra
• Is Part Of: ECS journal of solid state science and technology. Volume 11:Number 9(2022)
• Publication Date: 2022-09-01
• Subjects: active shielding -- crosstalk -- interconnects -- mixed CNT bundle -- ternary; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac936f
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The cumulative increase of resistivity in copper due to scaling and indispensable requirements of high current densities and unprecedented switching speed are the impelling forces behind the continuous investigation towards the new wiring solution for nanometer circuits and systems. Mixed carbon nanotube bundle (MCB) interconnects are the most optimistic solution that can address the challenges faced by the conventional materials and thereby enhances the lifetime of electrical interconnects. MCB is a combination of Single walled carbon nanotubes (SWCNT's) and Multi walled carbon nanotubes (MWCNT's). On the basis of hierarchical modelling, various bundle structures are introduced pertaining to the placement of SWCNT's and MWCNT's in the bundle. The reliability of the MCB structures are investigated by calculating the propagation delay and power dissipation. The delays and peak crosstalk noise are examined from the transient analysis for all the bundle structures considered in the present study. Further to improve the data rates and performance, CNTFET based ternary logic system is encompassed for MCB interconnects. Active shielding technique is incorporated effectively for minimizing the crosstalk effects. Finally, modelling of the mixed CNT bundle is done under the influence of temperature and the temperature sensitive crosstalk noise effects are investigated for CNTFET based active shielded MCB structures. Encouragingly, it is observed that, the crosstalk effects are lessened to a greater extent for the MCB structure wherein SWCNT's are placed at the centre and MWCNT's at the periphery. All these analyses have been carried out at 22 nm technology node.