Artificial optoelectronic synaptic characteristics of Bi2FeMnO6 ferroelectric memristor for neuromorphic computing. (October 2022)
- Record Type:
- Journal Article
- Title:
- Artificial optoelectronic synaptic characteristics of Bi2FeMnO6 ferroelectric memristor for neuromorphic computing. (October 2022)
- Main Title:
- Artificial optoelectronic synaptic characteristics of Bi2FeMnO6 ferroelectric memristor for neuromorphic computing
- Authors:
- Zhong, Wen-Min
Tang, Xin-Gui
Liu, Qiu-Xiang
Jiang, Yan-Ping - Abstract:
- Graphical abstract: Highlights: Photoelectric co-excited ferroelectric artificial synapse is reported. Bi2 FeMnO6 of R3c phase is reported for the first time with ferroelectricity. The neural network based on Bi2 FeMnO6 synapse achieves 98.80% handwritten digit recognition accuracy. Abstract: Photoelectric synapse is a new type of artificial synapse that combines light pulse excitation and electrical pulse excitation, and is an important component for the development of neuromorphic hardware. In this work, the Bi2 FeMnO6 ferroelectric artificial synapse with optoelectronic response is reported. It can generate an excitatory post-synaptic current through ultraviolet light irradiation and then modulate the excitatory post-synaptic current through ferroelectric polarization, thereby realizing a photo-ferroelectric dual-control synapse. A training method based on ultraviolet excitation and ferroelectric enhancement is proposed, which greatly reduced the number of training pulses and increased the plasticity of the synapse. The optimized spike scheme based on ferroelectricity is proposed, which made the synapse have very linear weight adjustment function. This synapse is used to build a convolutional neural network, which can achieve 98.80% recognition accuracy on the MNIST dataset. In addition, the ferroelectricity and multi-level resistive switching effect of synapse have also been reported.
- Is Part Of:
- Materials & design. Volume 222(2022)
- Journal:
- Materials & design
- Issue:
- Volume 222(2022)
- Issue Display:
- Volume 222, Issue 2022 (2022)
- Year:
- 2022
- Volume:
- 222
- Issue:
- 2022
- Issue Sort Value:
- 2022-0222-2022-0000
- Page Start:
- Page End:
- Publication Date:
- 2022-10
- Subjects:
- Bi2FeMnO6 -- Ferroelectric -- Photoelectric -- Resistive switch -- Artificial synapse -- Neuromorphic computing
Materials -- Periodicals
Engineering design -- Periodicals
Matériaux -- Périodiques
Conception technique -- Périodiques
Electronic journals
620.11 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/9062775.html ↗
http://www.sciencedirect.com/science/journal/02641275 ↗
http://www.sciencedirect.com/science/journal/02613069 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.matdes.2022.111046 ↗
- Languages:
- English
- ISSNs:
- 0264-1275
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5393.974000
British Library DSC - BLDSS-3PM
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- 23978.xml