Synthesis and characterization of direct vapour transport grown Sb2Se3 crystals. (2021)

• Record Type: Journal Article
• Authors: Patel, H.M.; Patel, P.B.; Desai, H.N.; Sikligar, S.P.; Dhimmar, J.M.; Modi, B.P.
• Is Part Of: Materials today. Volume 47:Part 2(2021)
• Page Start: 583
• Page End: 586
• Publication Date: 2021
• Subjects: Antiomony Selenide -- DVT technique -- Photoconductive parameters -- Trap depth parameters; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2020.10.897
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: Antimony Selenide (Sb2 Se3 ) crystals have been grown using Direct Vapour Transport (DVT) teechnique. The compositional, morphological, structural and photoconductive electrical properties of Sb2 Se3 crystals have been characterized. SEM image shows that no defect was observed in Sb2 Se3 crystal. XRD analysis revealed that the Sb2 Se3 crystal has orthorhombic structure. The photoconductive parameters (Responsivity, Specific Detectivity, EQE and IQE) and Trap Depth parameters were determined by the growth-decay curve and they rely on illumination intensity of incident light. These characteristics of Sb2 Se3 crystal portray it as one of the most favorable semi-conducting materials for efficient photo-electric devices.