Universal Scaling of Intrinsic Resistivity in Two‐Dimensional Metallic Borophene. (14th March 2018)

• Record Type: Journal Article
• Authors: Zhang, Jin; Zhang, Jia; Zhou, Liujiang; Cheng, Cai; Lian, Chao; Liu, Jian; Tretiak, Sergei; Lischner, Johannes; Giustino, Feliciano; Meng, Sheng
• Is Part Of: Angewandte Chemie. Volume 130:Number 17(2018)
• Page Start: 4675
• Page End: 4679
• Publication Date: 2018-03-14
• Subjects: Bloch-Grüneisen-Modell -- Borophen -- Elektron-Phonon-Kupplung -- Intrinsischer elektrischer Widerstand; Chemistry -- Periodicals; 540
• DOI: 10.1002/ange.201800087
• Languages: English
• ISSNs: 0044-8249

Abstract

Abstract: Two‐dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first‐principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well‐described using the Bloch–Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch–Grüneisen temperature is nearly fixed at 100 K. This work suggests that monolayer boron can serve as intriguing platform for realizing tunable two‐dimensional electronic devices. Abstract : Der intrinsische Widerstand von Borophen ist stark abhängig vom Polymorphietyp und der Ladungsträgerdichte. Der Widerstand lässt sich mit dem Bloch‐Grüneisen‐Modell gut beschreiben und skaliert universell.