Two‐Inch Wafer‐Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF‐Sputtering. (10th July 2022)

• Record Type: Journal Article
• Authors: Li, Qiang; Wang, Mingdi; Bai, Yunhe; Zhang, Qifan; Zhang, Haoran; Tian, Zhenhuan; Guo, Yanan; Zhu, Jingping; Liu, Yuhuai; Yun, Feng; Wang, Tao; Hao, Yue
• Is Part Of: Advanced functional materials. Volume 32:Number 38(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-07-10
• Subjects: hexagonal boron nitride -- liquid phase exfoliation -- resistance switching; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202206094
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: A film stripping method that allows for liquid phase exfoliation assisted by spin coating polymethyl methacrylate has been investigated, resulting in a two‐inch hexagonal boron nitride (hBN) film to be fully stripped and then transferred. A number of key factors that can influence the stripping and the transferring process of the films grown by sputtering have been systematically analyzed, including different solutions, different concentration of solution and different thickness of films. The morphology and properties of the hBN films before and after stripping have been characterized. The band edge absorption peak of the transferred film is 229 nm and the corresponding optical band gap is 5.50 eV. Such transferred hBN films have been fabricated into transparent resistive switching devices on indium‐tin‐oxide glass, demonstrating a constant resistance window of ≈10 2 even under different applied voltages. This work systematically studies the stripping process, characterizes the transferred films, and explores the application in the field of resistance switching, which lay a foundation for the further application of hBN materials in optoelectronic devices. Abstract : Wafer‐scale continuous hexagonal boron nitride thick films are prepared by magnetron sputtering, and the two‐inch complete films are peeled and transferred. The integrity and continuity of the transferred films are verified by measuring the resistance switching behavior. This work systematically studies the stripping process, characterizes the transferred films, and explores the application in the field of resistance switching.