Cite
HARVARD Citation
Khachariya, D. et al. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. Applied physics express. p. . [Online].
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Khachariya, D. et al. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. Applied physics express. p. . [Online].