Cite
HARVARD Citation
Gao, L. et al. (2020). Defect‐Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters. Advanced materials. 32 (2), p. n/a. [Online].
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Gao, L. et al. (2020). Defect‐Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters. Advanced materials. 32 (2), p. n/a. [Online].