Cite
HARVARD Citation
Peng, D. et al. (2022). A 4H–SiC double trench MOSFET with split gate and integrated MPS diode. Microelectronics journal. p. . [Online].
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Peng, D. et al. (2022). A 4H–SiC double trench MOSFET with split gate and integrated MPS diode. Microelectronics journal. p. . [Online].