Preparation and electrical characteristics of Li–N co-doped InZnAlO thin film transistors by radio frequency magnetron sputtering. (November 2022)

• Record Type: Journal Article
• Authors: Yang, Weiguang; Yang, Hui; Su, Jinbao; Zhang, Xiqing
• Is Part Of: Vacuum. Volume 205(2022)
• Publication Date: 2022-11
• Subjects: Li-N co-doped InZnAlO -- Thin film transistors -- Radio frequency magnetron sputtering; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2022.111419
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: In this paper, amorphous Li–N co-doped InZnAlO (IZAO:(Li, N)) thin film transistors (TFTs) with staggered bottom-gate structure were fabricated on SiO2 /Si substrates by radio frequency (RF) magnetron sputtering at room temperature. X-ray diffraction (XRD) pattern revealed that the IZAO:(Li, N) as-deposited film was amorphous. Secondary ion mass spectroscopy (SIMS) indicated that the films had a uniformly distribution of species. The TFTs annealed at 265 °C in nitrogen atmosphere showed the better electrical properties with a high saturation mobility (μSAT ) of 45.3 cm 2 V −1 s −1, a low threshold voltage (VTH )of 0.5 V, a low subthreshold swing (SS) of 0.42 V/dec, and a high on/off current ratio (Ion /Ioff ) of 5.1 × 10 8 . The threshold voltage shift (ΔVTH ) under positive and negative bias stability was 14.5 V and −13.1 V, respectively. Highlights: Li–N co-doped InZnAlO film was deposited by introducing Zn3 N2 and Li2 O in the target. IZAO:(Li, N) TFTs were prepared at low temperature(T < 300 °C). IZAO:(Li, N) TFTs show high saturation mobility (45.3cm 2 V −1 s −1 ) and on/off current ratio (5.1 × 10 8 ).