Improved thermal stability and ultralow resistance drift of pseudo-binary Sb2Se3–Bi2S3 material. (November 2022)

• Record Type: Journal Article
• Authors: Chen, Yingqi; Wu, Tong; Wang, Guoxiang; Zhu, Jinyi; Meng, Fanzhen; Jiao, Yucheng
• Is Part Of: Vacuum. Volume 205(2022)
• Publication Date: 2022-11
• Subjects: Resistance drift -- Thin film -- Crystal structure -- Thermal properties; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2022.111466
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: Pseudo-binary material Sb2 Se3 –Bi2 S3 is constructed using Sb2 Se3 (high thermal stability but high resistance drift) and Bi2 S3 (low resistance drift but low thermal stability). Sb2 Se3 –Bi2 S3 possesses the advantages of the two binary compounds and shows good thermal stability and ultralow resistance drift, which are related to the presence of amorphous Sb–Se phases and precipitation of Bi2 S3 nanoparticles, respectively. The (Sb2 Se3 )43.2 (Bi2 S3 )56.8 material has high crystallization temperature (220 °C) and low resistance drift (0.0022). Therefore, Sb2 Se3 –Bi2 S3 could be one of the most promising materials for phase change memory. Highlights: Pseudo-binary Sb2 Se3 –Bi2 S3 phase change films inherit the advantages of Sb2 Se3 and Bi2 S3 . The introduction of Bi2 S3 suppress the precipitation of Sb2 Se3, thus increasing crystallization temperature. Pseudo-binary Sb2 Se3 –Bi2 S3 materials obtain an ultra-low resistance drift.