Universal Platform for Scalable Semiconductor‐Superconductor Nanowire Networks. (4th July 2021)
- Record Type:
- Journal Article
- Title:
- Universal Platform for Scalable Semiconductor‐Superconductor Nanowire Networks. (4th July 2021)
- Main Title:
- Universal Platform for Scalable Semiconductor‐Superconductor Nanowire Networks
- Authors:
- Jung, Jason
Op het Veld, Roy L. M.
Benoist, Rik
van der Molen, Orson A. H.
Manders, Carlo
Verheijen, Marcel A.
Bakkers, Erik P. A. M. - Abstract:
- Abstract: Semiconductor‐superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top‐down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, a method that maintains the flexibility and scalability of selective area grown nanowire networks while omitting the necessity of etching to create hybrid segments is proposed. Instead, it takes advantage of directional growth methods and uses bottom‐up grown indium phosphide (InP) structures as shadowing objects to obtain selective metal deposition. The ability to lithographically define the position and area of these objects and to grow a predefined height ensures precise control of the shadowed region. The approach by growing indium antimonide nanowire networks with well‐defined aluminium and lead (Pb) islands is demonstrated. Cross‐section cuts of the nanowires reveal a sharp, oxide‐free interface between semiconductor and superconductor. By growing InP structures on both sides of in‐plane nanowires, a combination of platinum and Pb can independently be shadow deposited, enabling a scalable and reproducible in situ device fabrication. The semiconductor‐superconductor nanostructures resulting from this approach are at the forefront of material development for Majorana based experiments. Abstract :Abstract: Semiconductor‐superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top‐down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, a method that maintains the flexibility and scalability of selective area grown nanowire networks while omitting the necessity of etching to create hybrid segments is proposed. Instead, it takes advantage of directional growth methods and uses bottom‐up grown indium phosphide (InP) structures as shadowing objects to obtain selective metal deposition. The ability to lithographically define the position and area of these objects and to grow a predefined height ensures precise control of the shadowed region. The approach by growing indium antimonide nanowire networks with well‐defined aluminium and lead (Pb) islands is demonstrated. Cross‐section cuts of the nanowires reveal a sharp, oxide‐free interface between semiconductor and superconductor. By growing InP structures on both sides of in‐plane nanowires, a combination of platinum and Pb can independently be shadow deposited, enabling a scalable and reproducible in situ device fabrication. The semiconductor‐superconductor nanostructures resulting from this approach are at the forefront of material development for Majorana based experiments. Abstract : A novel approach is developed to create semiconductor–superconductor hybrids commonly used in research on topological quantum computation. It integrates shadow deposition with selective area growth allowing for a reproducible and scalable bottom‐up approach. This is demonstrated through the growth of branched, in‐plane indium antimonide nanowire networks with full control over the number, size, and position of its superconducting segments. … (more)
- Is Part Of:
- Advanced functional materials. Volume 31:Number 38(2021)
- Journal:
- Advanced functional materials
- Issue:
- Volume 31:Number 38(2021)
- Issue Display:
- Volume 31, Issue 38 (2021)
- Year:
- 2021
- Volume:
- 31
- Issue:
- 38
- Issue Sort Value:
- 2021-0031-0038-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-07-04
- Subjects:
- hybrid nanowire networks -- InSb -- SAG -- shadow deposition
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202103062 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 23813.xml