Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition. Issue 24 (31st October 2021)

• Record Type: Journal Article
• Authors: Zgheib, Charbel; Lubov, Maxim N.; Kulikov, Dmitri V.; Kharlamov, Vladimir S.; Thiele, Sebastian; Morales, Francisco M.; Romanus, Henry; Rahbany, Nancy; Beainy, Georges; Stauden, Thomas; Pezoldt, Jörg
• Is Part Of: Physica status solidi. Volume 218:Issue 24(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-31
• Subjects: cubic silicon carbide -- diffusion -- Fourier transformed infrared spectroscopy -- heteroepitaxy -- molecular beam epitaxy -- phase transition -- secondary ion mass spectroscopy; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100399
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Secondary ion mass spectroscopy, Fourier transformed infrared spectroscopy, ellipsometry, reflection high energy diffraction and transmission electron microscopy are used to gain inside into the effect of Ge on the formation of ultrathin 3C‐SiC layers on Si(111) substrates. Accompanying the experimental investigations with simulations it is found that the ultrathin single crystalline 3C‐SiC layer is formed on top of a gradient Si1– x – y Ge x C y buffer layer due to a complex alloying and alloy decomposition processes promoted by carbon and germanium interdiffusion and SiC nucleation. This approach allows tuning residual stress at very early growth stages as well as the interface properties of the 3C‐SiC/Si heterostructure. Useful yields of secondary ions of Ge in Si matrix and Si dimer are estimated. Abstract : Secondary ion mass spectroscopy, Fourier transformed infrared spectroscopy, reflection high energy electron diffraction, ellipsometry, and transmission electron microscopy investigations are used to gain inside into the effect of Ge on the chemoheteroepitaxy of 3C‐SiC on Si(111). Experimental investigations and simulations demonstrate the formation of a ultrathin single crystalline 3C‐SiC layer on a gradient Si1– x – y Ge x C y buffer layer due to an alloying and alloy decomposition promoted by carbon and germanium interdiffusion and SiC nucleation. This approach allows tuning residual stress and the interface at very early growth stages.